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NPN SILICON TRANSISTOR NE856M03
FEATURES
* NEW M03 PACKAGE: * Smallest transistor outline package available * Low profile/0.59 mm package height * Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: ICMAX = 100 mA
1.4 0.1 0.45 (0.9) 0.45 1 0.20.1
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.20.05 0.80.1 2
* *
TC
3
0.30.1
DESCRIPTION
NEC's NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles.
0.590.05 +0.1 0.15 -0.05
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Forward Current Gain at VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz A A pF 0.7 UNITS GHz dB dB 7.0 80 MIN 3.0 NE856M03 2SC5432 M03 TYP 4.5 1.4 10.0 145 1.0 1.0 1.5 2.5 MAX
California Eastern Laboratories
NE856M03 NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB
Q1
LCX
LBX Base
LB CCE
Collector
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 9.2e-16 110.3 1.01 18 1 4.89e-9 4.37 10.08 1.0 8 0.03 3.32e-11 3.95 0.33 1.26 2 0.05 6.63 2.8e-12 1.3 0.5 1.1e-12 0.7 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.55 0.3 0 0.75 0 0.5 4e-12 30 0.69 0.06 0 1e-9 1.11 0 3 1.56e-18 1.49
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 856M03 0.087e-12 0.16e-12 0.5e-9 0.6e-9 0.08e-12 0.08e-12 0.12e-9 0.10e-9 0.12e-9
MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 10 V, IC = 0.5 mA to 10 mA Date: 11/98
(1) Gummel-Poon Model
NE856M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 20 12 3 100 125 150 -65 to +150 PART NUMBER NE856M03-A NE856M03-T1-A QUANTITY
ORDERING INFORMATION
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
100
500 VCE = 10 V
FORWARD CURRENT GAIN vs. COLLECTOR CURRENT
DC Forward Current Gain, hFE
2 4 6 8 10 12
300 200
Collector Current, IC (mA)
80
60
100 70 50 30 20
40
20
10
0
1
2
3
5
7
10
20
30
50
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
NE856M03 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT
-80
IM3 -70 VCE = 10 V VO = 100 dBV/50 RG = RL = 50 -60 IM2
IM2, IM3 (dB)
-50
-40 IM2 f = 90 + 100 MHz IM3 f = 2 X 200-190 MHz -30 20 30 40 50 60 70
Collector Current, IC (mA)
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 06/10/2002
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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